NiO as an inorganic hole-transporting layer in quantum-dot light-emitting devices.
نویسندگان
چکیده
We demonstrate a hybrid inorganic/organic light-emitting device composed of a CdSe/ZnS core/shell semiconductor quantum-dot emissive layer sandwiched between p-type NiO and tris-(8-hydroxyquinoline) aluminum (Alq3), as hole and electron transporting layers, respectively. A maximum external electroluminescence quantum efficiency of 0.18% is achieved by tuning the resistivity of the NiO layer to balance the electron and hole densities at quantum-dot sites.
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ورودعنوان ژورنال:
- Nano letters
دوره 6 12 شماره
صفحات -
تاریخ انتشار 2006